Free download Handbook of Thin-Film Deposition Processes and Techniques Principles, Methods, Equipment and Applications 2nd Edition by Krishna Seshan

2nd Edition

Authors of: Handbook of Thin-Film Deposition Processes and Techniques Principles, Methods, Equipment and Applications 2nd Edition by Krishna Seshan

Krishna Seshan

Table of Contents in Handbook of Thin-Film Deposition Processes and Techniques Principles, Methods, Equipment and Applications 2nd Edition by Krishna Seshan

Foreword – Gordon E. Moore
A perspective from industry pioneer Gordon Moore, offering insights into the historical significance, evolution, and future of semiconductor technology and thin-film deposition.

Preface to the Second Edition – Krishna Seshan
In this preface, the author discusses updates introduced in the second edition, addressing technological advancements, process innovations, and expanded applications in emerging sectors such as photovoltaics and MEMS.

Preface to the First Edition – Klaus K. Schuegraf
A foundational overview of the book’s original objectives, target audiences, and the role it plays in bridging academic research and industrial practice in thin-film deposition.

Contributors
A comprehensive list of contributors from industry and academia, each bringing unique expertise in chemical vapor deposition, physical vapor deposition, surface analysis, and metrology.

Recent Changes in the Semiconductor Industry – Krishna Seshan (pp. 1–9)
This introductory chapter outlines the major shifts in the global semiconductor industry, including scaling limitations, new material integration, cost challenges, and the rise of advanced packaging. The discussion emphasizes the growing complexity of process integration and the demand for more precise deposition control in sub-10 nm nodes.

Chapter 1: Deposition Technologies and Applications: Introduction and Overview
Authors: Werner Kern, Klaus K. Schuegraf
A thorough overview of the fundamental classifications of thin-film deposition processes: physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), and epitaxy. The chapter introduces key terminology, film properties (adhesion, stress, morphology), and offers application-driven perspectives in microelectronics, optics, magnetic media, and MEMS. (pp. 11–43)

Chapter 2: Silicon Epitaxy by Chemical Vapor Deposition
Author: Martin L. Hammond
This chapter presents a detailed treatment of epitaxial film growth, focusing on low-pressure and ultrahigh-vacuum CVD methods for single-crystal silicon layers. Topics include doping control, defect minimization, crystalline alignment, and reactor configurations (hot-wall vs. cold-wall). It emphasizes applications in bipolar transistors, CMOS, and SOI technologies. (pp. 45–110)

Chapter 3: Chemical Vapor Deposition of Silicon Dioxide Films
Author: John Foggiato
Explores various types of silicon dioxide films deposited via CVD: thermal oxide, plasma-enhanced CVD (PECVD), and low-temperature oxide (LTO). The chapter covers precursor chemistry (TEOS, silane), gas flow dynamics, step coverage, and dielectric constant tuning. Application examples include intermetal dielectric (IMD) and isolation layers. (pp. 111–150)

Chapter 4: Metal Organic Chemical Vapor Deposition: Technology and Equipment
Author: John L. Zilko
This chapter details MOCVD as a key enabler in compound semiconductor and optoelectronic device fabrication. Topics include precursor selection, carrier gas control, bubbler systems, and reactor design. The discussion covers deposition of GaN, InP, and AlGaAs for LEDs, lasers, and HEMTs. Safety considerations for organometallics are also addressed. (pp. 151–203)

Chapter 5: Feature Scale Modeling
Author: Vivek Singh
Focuses on computational techniques used to simulate thin-film growth in sub-micron features. Includes level-set methods, Monte Carlo simulations, and continuum modeling. These models assist in predicting step coverage, loading effects, and aspect ratio dependent deposition (ARDE). Examples illustrate how modeling improves yield and process window optimization. (pp. 205–240)

Chapter 6: The Role of Metrology and Inspection in Semiconductor Processing
Authors: Mark Keefer, Rebecca Pinto, Cheri Dennison, James Turlo
Covers process monitoring and control methods, including ellipsometry, reflectometry, scatterometry, and X-ray techniques. It also highlights the role of in-line defect inspection tools like SEM and E-beam, and how real-time feedback ensures uniformity and repeatability in deposition steps. (pp. 241–286)

Chapter 7: Contamination Control, Defect Detection, and Yield Enhancement in Gigabit Manufacturing
Authors: Suresh Bhat, Krishna Seshan
Explores the importance of particulate control, outgassing minimization, and cleanroom design. Methods like defect density mapping, root cause analysis, and process zoning are discussed. Emphasis is placed on how high-volume manufacturing of gigabit-scale devices depends on proactive contamination mitigation strategies. (pp. 287–318)

Chapter 8: Sputtering and Sputter Deposition
Author: Stephen Rossnagel
Delves into PVD methods, specifically RF, DC, and magnetron sputtering. Covers target materials (Ti, W, Cu), sputter yield, plasma physics, and thin-film stress. Applications include metal interconnects, barrier layers, and magnetic coatings. Equipment design considerations and throughput enhancement strategies are also addressed. (pp. 319–348)

Chapter 9: Laser and Electron Beam Assisted Processing
Authors: Cameron A. Moore, Zeng-qi Yu, Lance R. Thompson, George J. Collins
Discusses the use of high-energy beams to selectively heat, anneal, or deposit materials. Covers pulsed laser deposition (PLD), laser CVD, and electron-beam physical vapor deposition (EBPVD). Examples include annealing dopants, recrystallizing amorphous layers, and creating complex oxides. (pp. 349–379)

Chapter 10: Molecular Beam Epitaxy: Equipment and Practice
Authors: Walter S. Knodle, Robert Chow
Provides an in-depth look into ultra-high vacuum epitaxy for compound semiconductors. Covers effusion cell design, RHEED monitoring, and flux calibration. Applications include quantum wells, superlattices, and research into nanostructures. MBE’s precision in monolayer control is emphasized throughout. (pp. 381–461)

Chapter 11: Ion Beam Deposition
Authors: John R. McNeil, James J. McNally, Paul D. Reader
Covers ion beam assisted deposition (IBAD) and direct ion beam deposition methods. Discusses beam generation, energy tuning, and substrate interactions. Applications include hard coatings, optical films, and surface modification. Advantages in adhesion and film density are contrasted with sputtering and CVD. (pp. 463–499)

Chapter 12: Chemical Mechanical Polishing
Author: Kenneth C. Cadien
Explains the fundamentals of CMP, a hybrid technique involving chemical etching and mechanical abrasion. Discusses slurry chemistry, pad conditioning, and end-point detection. Applications in STI planarization, damascene copper processing, and wafer-level packaging are described in detail. (pp. 501–512)

Chapter 13: Organic Dielectrics in Multilevel Metallization of Integrated Circuits
Authors: Krishna Seshan, Dominic J. Schepis, Laura B. Rothman
Analyzes the integration of low-k organic dielectric materials to reduce RC delay in multilayer interconnects. Covers polymeric dielectrics, spin-on deposition, curing methods, and reliability challenges such as moisture uptake and mechanical integrity. (pp. 513–593)

Chapter 14: Performance, Processing, and Lithography Trends
Author: Krishna Seshan
Provides a forward-looking analysis of lithography (EUV, nanoimprint), emerging transistor architectures (FinFETs, GAA), and how deposition techniques are adapting. Focus on process simplification, 3D integration, and heterogeneous packaging trends in logic and memory devices. (pp. 595–607)

Index (pp. 609–629)
A detailed index for locating topics, methods, and materials discussed across the text, aiding in quick reference and further study.

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